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Tunneling injection of electrons into thin normal-metal films

V. P. SeminozhenkoPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSRA. A. YatsenkoPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR
ABI

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We examine the formation of a substantial non-Fermi electron distribution near the Fermi surface of a normal (N) metal placed as a thin film in a tunnel structure of the type N1-I-N-I-N1 (I is an insulator, N1 is a bulk electrode). Conditions are obtained for forming a terrace in the electron energy distribution of the middle film at the Fermi surface, due to the tunnel current through such a system.

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