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Ion doping of gallium arsenide

П. В. ПавловPhysicotechnical Research Institute at the N. I. Lobachevskii State University, GorkiE. I. ZorinPhysicotechnical Research Institute at the N. I. Lobachevskii State University, GorkiD. I. TetelbaumPhysicotechnical Research Institute at the N. I. Lobachevskii State University, Gorki

Russian Physics Journaljournal1980en

ABI

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Annotatsiya mavjud emas.

Mavzular

Phase-change materials and chalcogenides Semiconductor Quantum Structures and Devices Advanced Semiconductor Detectors and Materials

Identifikatorlar

DOI: 10.1007/bf00895766

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