D. I. Tetelbaum

2 ta ish

Physicotechnical Research Institute at the N. I. Lobachevskii State University, Gorki

1. Ion doping of gallium arsenide

   П. В. Павлов, E. I. Zorin, D. I. Tetelbaum

   MaqolaPhase-change materials and chalcogenidesRussian Physics Journal19800 iqtibos

   ABIABI:AkademIndex/openalex/1980.article.000147

2. High-resolution X-ray photoelectron spectroscopy and characteristic electron-energy loss spectroscopy of the electronic structure of phosphorus-implanted silicon and quantum dots of silicon dioxide with silicon impurities

   O. K. Kuvandikov, E.U. Arzikulov, А. И. Ковалев +1

   MaqolaSilicon Nanostructures and PhotoluminescenceJournal of Communications Technology and Electronics20070 iqtibos

   ABIABI:AkademIndex/openalex/2007.article.000343