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Ish: Positron Annihilation and Electrical Properties of Electron-Irradiated (≈ 2 MeV) InAs Crystals

1. The electrical and optical properties of InAs irradiated with electrons (∼2 MeV): The energy structure of intrinsic point defects

   V. N. Brudnyı̆, S. N. Grinyaev, N. G. Kolin

   MaqolaAdvanced Semiconductor Detectors and MaterialsSemiconductors20050 iqtibos

   ABIABI:AkademIndex/openalex/2005.article.000120