Effect of impurities on thermally activated and quantum creep of zinc single crystals
L. N. ZagoruĭkoPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR , KharkovВ. Д. НацикPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR , KharkovV. P. SoldatovPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR , Kharkov
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Annotatsiya
The low-temperature creep of zinc single crystals with various contents of silver and lead impurities has been investigated. A detailed thermal-activation analysis was made of the experimental data to establish the type and characteristics of the barriers to basal slip and to determine the quantum mechanisms by which dislocations surmount these barriers. The role of effective barriers to dislocations in the alloys studied is shown to be played by pair complexes and not by single impurity atoms, i.e., low-temperature creep is controlled by sufficiently strong local barriers. Below T ≲ 30° K such barriers are surmounted as a result of the quantum motion of dislocation segments.
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