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Radiation defects in Ar+-ion-implanted Hg1?xCdxTe crystals

A. S. PetrovV. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, TomskВ. С. КуликаускасV. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, TomskYu. V. LilenkoV. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, TomskА. П. КоханенкоV. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, TomskА. В. ВойцеховскийV. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, TomskE. M. KiryushkinV. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, TomskK. V. ShastovV. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, TomskК. КурбановV. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, TomskA. P. MamontovV. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, TomskV. A. KorotchenkoV. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, Tomsk

Russian Physics Journaljournal1988en

ABI

Annotatsiya

Annotatsiya mavjud emas.

Mavzular

Advanced Semiconductor Detectors and Materials Ion-surface interactions and analysis Integrated Circuits and Semiconductor Failure Analysis

Identifikatorlar

DOI: 10.1007/bf01101176

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