А. В. Войцеховский

3 ta ish

V. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, Tomsk

1. Drag of carriers by photons in narrow-gap semiconductors

   В. В. Антонов, А. В. Войцеховский, A. V. Kozyrev

   MaqolaAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal19800 iqtibos

   ABIABI:AkademIndex/openalex/1980.article.000107

2. Investigation of the electrical and photoelectric properties of manganese-doped gallium arsenide as a material for photoresistive detectors

   В. В. Антонов, А. В. Войцеховский, M. A. Krivov +6

   MaqolaAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal19810 iqtibos

   ABIABI:AkademIndex/openalex/1981.article.000112

3. Radiation defects in Ar+-ion-implanted Hg1?xCdxTe crystals

   A. S. Petrov, В. С. Куликаускас, Yu. V. Lilenko +7

   MaqolaAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal19880 iqtibos

   ABIABI:AkademIndex/openalex/1988.article.000117