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M. A. Krivov

6 ta ish

V. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, Tomsk

  1. Influence of copper impurity and structure defects on the properties of compound CdSnAs2

    Olga V. Voevodina, A. P. Vyatkin, T. V. Vedernikova +3

    MaqolaAdvanced Research in Systems and Signal ProcessingRussian Physics Journal19800 iqtibos
    ABI

  2. Behavior of copper in gallium arsenide with high tin concentration

    I. V. Kаmenskaya, M. A. Krivov, E. V. Malisova +6

    MaqolaSemiconductor Quantum Structures and DevicesRussian Physics Journal19800 iqtibos
    ABI

  3. Electrical properties of ion-doped GaAs films obtained by implanting E=100-keV Cd+ ions

    B. S. Azikov, V. N. Brudnyı̆, I. V. Kаmenskaya +1

    MaqolaSemiconductor materials and interfacesRussian Physics Journal19810 iqtibos
    ABI

  4. Investigation of the electrical and photoelectric properties of manganese-doped gallium arsenide as a material for photoresistive detectors

    В. В. Антонов, А. В. Войцеховский, M. A. Krivov +6

    MaqolaAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal19810 iqtibos
    ABI

  5. Thermal stability of optical properties of electron-irradiated GaAs

    D. L. Budnitskii, M. A. Krivov

    MaqolaSemiconductor materials and interfacesRussian Physics Journal19820 iqtibos
    ABI

  6. Photoionization cross sections of E levels in electron-irradiated n-type GaAs

    D. L. Budnitskii, M. A. Krivov, E. Popova

    MaqolaElectron and X-Ray Spectroscopy TechniquesRussian Physics Journal19860 iqtibos
    ABI