B. S. Azikov

1 ta ish

V. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, Tomsk

1. Electrical properties of ion-doped GaAs films obtained by implanting E=100-keV Cd+ ions

   B. S. Azikov, V. N. Brudnyı̆, I. V. Kаmenskaya +1

   MaqolaSemiconductor materials and interfacesRussian Physics Journal19810 iqtibos

   ABIABI:AkademIndex/openalex/1981.article.000091