Maqola

Electrical properties of ion-doped GaAs films obtained by implanting E=100-keV Cd+ ions

B. S. AzikovV. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, TomskV. N. Brudnyı̆V. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, TomskI. V. KаmenskayaV. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, TomskM. A. KrivovV. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, Tomsk

Russian Physics Journaljournal1981en

ABI

Annotatsiya

Annotatsiya mavjud emas.

Mavzular

Semiconductor materials and interfaces Ion-surface interactions and analysis Polymer Nanocomposite Synthesis and Irradiation

Identifikatorlar

DOI: 10.1007/bf00894493

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