I. V. Kаmenskaya

2 ta ish

V. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk

1. Behavior of copper in gallium arsenide with high tin concentration

   I. V. Kаmenskaya, M. A. Krivov, E. V. Malisova +6

   MaqolaSemiconductor Quantum Structures and DevicesRussian Physics Journal19800 iqtibos

   ABIABI:AkademIndex/openalex/1980.article.000114

2. Electrical properties of ion-doped GaAs films obtained by implanting E=100-keV Cd+ ions

   B. S. Azikov, V. N. Brudnyı̆, I. V. Kаmenskaya +1

   MaqolaSemiconductor materials and interfacesRussian Physics Journal19810 iqtibos

   ABIABI:AkademIndex/openalex/1981.article.000091