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Behavior of copper in gallium arsenide with high tin concentration

I. V. KаmenskayaV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskM. A. KrivovV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskE. V. MalisovaV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk�. N. Mel'chenkoV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk,V.S. MorozovV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskМ. П. НикифороваV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskE. PopovaV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskL. K. TarasovaV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskS. S. KhludkovV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk

Russian Physics Journaljournal1980en

ABI

Annotatsiya

Annotatsiya mavjud emas.

Mavzular

Semiconductor Quantum Structures and Devices Quantum and electron transport phenomena Chalcogenide Semiconductor Thin Films

Identifikatorlar

DOI: 10.1007/bf00892529

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