E. V. Malisova

2 ta ish

V. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk

1. Behavior of copper in gallium arsenide with high tin concentration

   I. V. Kаmenskaya, M. A. Krivov, E. V. Malisova +6

   MaqolaSemiconductor Quantum Structures and DevicesRussian Physics Journal19800 iqtibos

   ABIABI:AkademIndex/openalex/1980.article.000114

2. Investigation of the electrical and photoelectric properties of manganese-doped gallium arsenide as a material for photoresistive detectors

   В. В. Антонов, А. В. Войцеховский, M. A. Krivov +6

   MaqolaAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal19810 iqtibos

   ABIABI:AkademIndex/openalex/1981.article.000112