Investigation of the electrical and photoelectric properties of manganese-doped gallium arsenide as a material for photoresistive detectors
В. В. АнтоновV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskА. В. ВойцеховскийV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskM. A. KrivovV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskE. V. MalisovaV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk�. N. Mel'chenkoV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk,М. П. НикифороваV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskE. PopovaV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskG. M. FuksV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, TomskS. S. KhludkovV. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk
ABI
Annotatsiya
Annotatsiya mavjud emas.
Mavzular
Identifikatorlar
Iqtiboslar va manbalar
0 ta iqtibos1 ta foydalanilgan manba
Koʻrsatkichlar — AkademScholar · Tez orada