Ushbu ish iqtibos qilgan ishlar

5 ta ish

Ish: Properties of SiC on Si Substrate Films Obtained Using the Plasma-Chemical Method

1. Production of large-area single-crystal wafers of cubic SiC for semiconductor devices

   Shigehiro Nishino, J. A. Powell, Hannes Will

   Maqola19832 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.605511

2. ‘‘Buffer-layer’’ technique for the growth of single crystal SiC on Si

   Arrigo Addamiano, J.A. Sprague

   Maqola19842 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.605514

3. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.625433

4. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.625434

5. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.625435