Maqola

‘‘Buffer-layer’’ technique for the growth of single crystal SiC on Si

Arrigo AddamianoNaval Research Laboratory, Washington, D.C. 20375J.A. SpragueNaval Research Laboratory, Washington, D.C. 20375

1984en

ABI

Annotatsiya

The nature of the buffer layers needed for the single crystal deposition of cubic SiC on Si substrates was studied. It is concluded that the buffer layer is a stressed monocrystalline layer of cubic SiC.

Hali tarjima qilinmagan

Identifikatorlar

DOI: 10.1063/1.94820

Iqtiboslar va manbalar

2 ta iqtibos0 ta foydalanilgan manba

Koʻrsatkichlar — AkademScholar