Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: ‘‘Buffer-layer’’ technique for the growth of single crystal SiC on Si

1. Investigation of crystal structure of cubic silicon carbide layers

   М. С. Саидов, Kh. A. Shamuratov, Marsel Kadyrov +1

   MaqolaSilicon Carbide Semiconductor Technologiesphysica status solidi (a)19860 iqtibos

   ABIABI:AkademIndex/openalex/1986.article.000039

2. Properties of SiC on Si Substrate Films Obtained Using the Plasma-Chemical Method

   S. I. Vlaskina, Alla Krasikova, В. Е. Родионов

   MaqolaSilicon Carbide Semiconductor Technologiesphysica status solidi (a)19910 iqtibos

   ABIABI:AkademIndex/openalex/1991.article.000047