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The investigation of charge carriers life time dependence on degree of silicon doping with admixtures creating the deep levels

Sh. MakhkamovN.A. TursunovM. AshurovAN RU, Tashkent (Uzbekistan). Inst. Yadernoj Fiziki

1995en

ABI

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Semiconductor Quantum Structures and Devices Advancements in Semiconductor Devices and Circuit Design Silicon and Solar Cell Technologies

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