Spectroscopy of layers of InAs in GaAs across the transition from layered to three-dimensional growth
Б. Н. ЗвонковPhysicotechnical Institute, Nizhegorod State University, 603600, Nizhnii Novgorod, RussiaE. R. Lin’kovaI. G. MalkinaPhysicotechnical Institute, Nizhegorod State University, 603600, Nizhnii Novgorod, RussiaД. О. ФилатовPhysicotechnical Institute, Nizhegorod State University, 603600, Nizhnii Novgorod, RussiaA. L. ChernovPhysicotechnical Institute, Nizhegorod State University, 603600, Nizhnii Novgorod, Russia
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Annotatsiya
Changes in the photoluminescence spectra and photoelectric phenomena at the transition from layered to three-dimensional growth with the formation of quantum dots were traced in samples with continuously increasing effective thickness of the strained layer.
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