Exciton-stimulated modulation of recombination in solar cells

Annotatsiya

This work reports an investigation of the effect of excitons on carrier recombination and solar energy conversion processes. The probabilities of exciton-stimulated modulation of the occupancy of r centers in CdS as well as the binding coefficient of free electrons and holes into excitons are estimated. Carrier recombination and transport theories are presented. The theories are applied to Cu2S/CdS solar cells for AM1 illumination at a temperature of 300 K. It has been shown by numerical estimation that exciton-stimulated modulation of the occupancy of deep impurities does give a significant reduction of carrier recombination losses and efficiency improvements for Cu2S/CdS solar cells.

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Identifikatorlar

DOI

10.1063/1.366448

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