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Infrared laser (λ=3.2 μm) based on broken-gap type II heterojunctions with improved temperature characteristics

K. D. MoiseevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgM. P. MikhaiovaA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgO. G. ErshovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgYu. P. YakovlevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

Technical Physics Lettersjournal1997en

ABI

Annotatsiya

Laser structures based on broken-gap type II p-GaInAsSb/n-InGaAsSb heterojunctions in the active region are proposed and studied. Lasing at 3.2–3.4 μm has been obtained in the temperature range 77–195 K with a threshold current density of 400 A/cm2 at 77 K and a characteristic temperature T0=47 K.

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Mavzular

Advanced Semiconductor Detectors and Materials Semiconductor Quantum Structures and Devices Advanced Optical Sensing Technologies

Identifikatorlar

DOI: 10.1134/1.1261568

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