M. P. Mikhaiova

1 ta ish

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

1. Infrared laser (λ=3.2 μm) based on broken-gap type II heterojunctions with improved temperature characteristics

   K. D. Moiseev, M. P. Mikhaiova, O. G. Ershov +1

   MaqolaAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/openalex/1997.article.000151