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Polycrystalline silicon S-diode fabricated using phosphorus thermal diffusion along grain boundaries

R. AlievInstitute of Electronics, Academgorodok, 700143, Tashkent, UzbekistanB. M. AbdurakhmanovInstitute of Electronics, Academgorodok, 700143, Tashkent, UzbekistanR. BilyalovInstitute of Electronics, Academgorodok, 700143, Tashkent, Uzbekistan

Interface Sciencejournal1997en

ABI

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Mavzular

Semiconductor materials and interfaces Silicon and Solar Cell Technologies Silicon Nanostructures and Photoluminescence

Identifikatorlar

DOI: 10.1007/bf00200844

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