Interface Science

1 ta ish

Jurnal · ISSN 0927-7056

1. Polycrystalline silicon S-diode fabricated using phosphorus thermal diffusion along grain boundaries

   R. Aliev, B. M. Abdurakhmanov, R. Bilyalov

   MaqolaSemiconductor materials and interfacesInterface Science19970 iqtibos

   ABIABI:AkademIndex/openalex/1997.article.000236