Interface Science

Работ: 1

Журнал · ISSN 0927-7056

1. Polycrystalline silicon S-diode fabricated using phosphorus thermal diffusion along grain boundaries

   R. Aliev, B. M. Abdurakhmanov, R. Bilyalov

   СтатьяSemiconductor materials and interfacesInterface Science1997Цитирований: 0

   ABIABI:AkademIndex/openalex/1997.article.000236