R. Bilyalov

Работ: 4

Arifov Institute of Electronics, Uzbek Academy of Sciences, Tashkent 700143, Uzbekistan

1. Superlinearity of photocurrent in polycrystalline Si p - n structures

   B. M. Abdurakhmanov, Р. Алиев, R. Bilyalov

   СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductor Science and Technology1996Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.624474

2. Hydrogen passivation of defects in polycrystalline silicon solar cells

   B. M. Abdurakhmanov, R. Bilyalov

   СтатьяSilicon and Solar Cell TechnologiesRenewable Energy1995Цитирований: 0

   ABIABI:AkademIndex/openalex/1995.article.000030

3. Hydrogen Passivation of Defects in Electron Irradiated Polycrystalline Silicon Solar Cells

   R. Bilyalov, B. M. Abdurakhmanov

   СтатьяSilicon and Solar Cell TechnologiesMRS Proceedings1995Цитирований: 0

   ABIABI:AkademIndex/openalex/1995.article.000151

4. Polycrystalline silicon S-diode fabricated using phosphorus thermal diffusion along grain boundaries

   R. Aliev, B. M. Abdurakhmanov, R. Bilyalov

   СтатьяSemiconductor materials and interfacesInterface Science1997Цитирований: 0

   ABIABI:AkademIndex/openalex/1997.article.000236