Superlinearity of photocurrent in polycrystalline Si p - n structures
B. M. AbdurakhmanovArifov Institute of Electronics, Uzbek Academy of Sciences, Tashkent 700143, UzbekistanР. АлиевArifov Institute of Electronics, Uzbek Academy of Sciences, Tashkent 700143, UzbekistanR. BilyalovArifov Institute of Electronics, Uzbek Academy of Sciences, Tashkent 700143, Uzbekistan
ABI
Аннотация
An analysis of the superlinear dependence of the short-circuit current of polycrystalline Si solar cells on the concentration of solar radiation has been carried out. It is shown that the superlinearity effect depends on the concentration of recombination centres in the initial polycrystalline material. In solar cells designed to operate under concentrated solar radiation, an increased concentration of recombination centres is not only permissible but even desirable for achieving a higher conversion efficiency.
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