Interface Science

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Журнал · ISSN 0927-7056

1. Polycrystalline silicon S-diode fabricated using phosphorus thermal diffusion along grain boundaries

   R. Aliev, B. M. Abdurakhmanov, R. Bilyalov

   МақолаSemiconductor materials and interfacesInterface Science19970 иқтибос

   ABIABI:AkademIndex/openalex/1997.article.000236