Fabrication of InAs quantum dots on silicon
G. É. CirlinA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. N. PetrovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgВ. Г. ДубровскийA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgS. A. MasalovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. O. GolubokA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgN. I. KomyakA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgN. N. LedentsovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgZh. I. AlfërovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgD. BimbergA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
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Reflection high-energy electron diffraction and scanning tunneling microscopy have been used to demonstrate for the first time that InAs quantum dots may be fabricated directly on Si(100) by molecular beam epitaxy. It is shown that heteroepitaxial growth in an InAs/Si system takes place by the Stranski-Krastanow mechanism and the surface morphology depends strongly on the substrate temperature.
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