D. Bimberg

4 ta ish

Technische Universität Berlin

1. Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W

   Yu. M. Shernyakov, A. Yu. Egorov, A. E. Zhukov +12

   MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/openalex/1997.article.000137

2. Fabrication of InAs quantum dots on silicon

   G. É. Cirlin, V. N. Petrov, В. Г. Дубровский +6

   MaqolaSurface and Thin Film PhenomenaTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/openalex/1998.article.000052

3. Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region

   Yu. M. Shernyakov, A. Yu. Egorov, B. V. Volovik +11

   MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/openalex/1998.article.000065

4. Lasing in submonolayer InAs/AlGaAs structures without external optical confinement

   B. V. Volovik, A. F. Tsatsul’nikov, N. N. Ledentsov +11

   MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/openalex/1998.article.000117