B. V. Volovik

4 ta ish

A.F.Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

1. Room-temperature lasing in structures with CdSe quantum islands in a ZnMgSSe matrix without external optical confinement

   A. V. Sakharov, S. V. Ivanov, S. V. Sorokin +4

   MaqolaStrong Light-Matter InteractionsTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/openalex/1997.article.000056

2. Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm

   V. M. Ustinov, A. R. Kovsh, A. E. Zhukov +9

   MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/openalex/1998.article.000030

3. Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region

   Yu. M. Shernyakov, A. Yu. Egorov, B. V. Volovik +11

   MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/openalex/1998.article.000065

4. Lasing in submonolayer InAs/AlGaAs structures without external optical confinement

   B. V. Volovik, A. F. Tsatsul’nikov, N. N. Ledentsov +11

   MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/openalex/1998.article.000117