Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm
V. M. UstinovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. R. KovshA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. E. ZhukovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. Yu. EgorovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgN. N. LedentsovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. V. LunevA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgYu. M. ShernyakovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgМ. В. МаксимовA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. F. Tsatsul’nikovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgB. V. VolovikA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgP. S. Kop’evA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgZh. I. AlfërovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
Annotatsiya
The use of InAs quantum dots in an InGaAs matrix lattice-matched with an InP substrate can appreciably increase the emission wavelength of quantum-dot lasers. Lasing via quantum-dot states at the 1.84 μm wavelength (77 K) was obtained for the first time at a threshold current density of 64 A/cm2.
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