A. V. Lunev

3 ta ish

Technische Universität Berlin

1. Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W

   Yu. M. Shernyakov, A. Yu. Egorov, A. E. Zhukov +12

   MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/openalex/1997.article.000137

2. Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm

   V. M. Ustinov, A. R. Kovsh, A. E. Zhukov +9

   MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/openalex/1998.article.000030

3. Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region

   Yu. M. Shernyakov, A. Yu. Egorov, B. V. Volovik +11

   MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/openalex/1998.article.000065