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Direct bonding of silicon wafers with a diffusion layer

V. B. VoronkovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgE. G. GukA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgВ. А. КозловA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. B. ShumanA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

Technical Physics Lettersjournal1998en

ABI

Annotatsiya

The possibility of solid-phase direct bonding of silicon wafers having p +-or n +-type diffusion layers with a high surface dopant concentration has been demonstrated for the first time.

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Mavzular

3D IC and TSV technologies Electronic Packaging and Soldering Technologies Semiconductor materials and interfaces

Identifikatorlar

DOI: 10.1134/1.1262055

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