Asosiy kontentga oʻtish
AkademIndex

Mahsulotlar

Ishlab chiquvchilar uchun

AkademBaseEkotizim uchun ochiq API
← Ishga qaytish

Ushbu ish iqtibos qilgan ishlar

28 ta ish

Ish: New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

  1. Sarlavhasiz

    Boshqa1117 iqtibos
    ABI

  2. Reversible conductivity changes in discharge-produced amorphous Si

    D. L. Staebler, C. R. Wroński

    Maqola19779 iqtibos
    ABI

  3. A new semiempirical electronic structure and total energy calculation method for solids and large molecules

    Z. M. Khakimov

    MaqolaAdvanced Chemical Physics StudiesComputational Materials Science19948 iqtibos
    ABI

  4. Simplified LCAO Method for the Periodic Potential Problem

    J. C. Slater, G. F. Koster

    Maqola19546 iqtibos
    ABI

  5. The electrical properties of sulphur in silicon

    S. D. Brotherton, Micháel J. King, G.J. Parker

    Maqola19816 iqtibos
    ABI

  6. Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study

    M. Stutzmann, W. B. Jackson, C. C. Tsai

    Maqola19855 iqtibos
    ABI

  7. (110) surface atomic structures of covalent and ionic semiconductors

    D. J. Chadi

    Maqola19795 iqtibos
    ABI

  8. Negative-U Properties for Point Defects in Silicon

    G. D. Watkins, John R. Troxell

    Maqola19805 iqtibos
    ABI

  9. Theory of the silicon vacancy: An Anderson negative-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>U</mml:mi></mml:math>system

    G. A. Baraff, E. O. Kane, Michael Schlüter

    Maqola19805 iqtibos
    ABI

  10. Transferable tight-binding models for silicon

    I. Kwon, R. Biswas, C. Z. Wang +2

    Maqola19944 iqtibos
    ABI

  11. Generating Transferable Tight-Binding Parameters: Application to Silicon

    L. Goodwin, A Skinner, D. G. Pettifor

    Maqola19894 iqtibos
    ABI

  12. Multiplet splittings and Jahn-Teller energies for the vacancy in silicon

    M. Lannoo, G. A. Baraff, Michael Schlüter

    Maqola19813 iqtibos
    ABI

  13. Microscopic Theory of Atomic Diffusion Mechanisms in Silicon

    Roberto Car, Paul J. Kelly, Atsushi Oshiyama +1

    Maqola19843 iqtibos
    ABI

  14. Barrier to Migration of the Silicon Self-Interstitial

    Yaneer Bar-Yam, John D. Joannopoulos

    Maqola19843 iqtibos
    ABI

  15. Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Aluminum-Vacancy Pair

    G. D. Watkins

    Maqola19673 iqtibos
    ABI

  16. A new mechanism for interstistitial migration

    J. C. Bourgoin, J. W. Corbett

    Maqola19723 iqtibos
    ABI

  17. High-resolution studies of sulfur- and selenium-related donor centers in silicon

    Erik Janzén, R. Stedman, G. Grossmann +1

    Maqola19843 iqtibos
    ABI

  18. Theory of hydrogen diffusion and reactions in crystalline silicon

    Chris G. Van de Walle, P. J. H. Denteneer, Yaneer Bar-Yam +1

    Maqola19892 iqtibos
    ABI

  19. The Nature of A Photoinduced Metastable State in α-Si:H

    F. T. Umarova, Z. M. Khakimov

    Bob19972 iqtibos
    ABI

  20. Computer Modelling of Electronic and Atomic Processes in Solids

    Kitob19972 iqtibos
    ABI

  21. Ion-solid interactions for materials modification and processing

    D. B. Poker, D. Ila, Yaxiong Cheng +2

    Maqola19962 iqtibos
    ABI

  22. Theory of Enhanced Migration of Interstitial Aluminum in Silicon

    G. A. Baraff, M. Schlüter, G. Allan

    Maqola19832 iqtibos
    ABI

  23. DEFECT METASTABILITY IN HYDROGEN PASSIVATED POLYCRYSTALLINE SILICON

    N. H. Nickel, W. B. Jackson, N. M. Johnson

    Maqola19942 iqtibos
    ABI

  24. DEFECTS IN AMORPHOUS Si:H — THE REHYBRIDIZED TWO-SITE (RTS) MODEL

    David Redfield

    Maqola19912 iqtibos
    ABI

  25. Role of hydrogen complexes in the metastability of hydrogenated amorphous silicon

    W. B. Jackson

    Maqola19902 iqtibos
    ABI