Unstrained epitaxial InxGa1−xAs films obtained on porous GaAs
F. Yu. SoldatenkovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. P. UlinA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgA. A. YakovenkoA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgО. М. ФедороваA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgS. G. KonnikovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgВ. И. КорольковA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,
ABI
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Epitaxial layers of InGaAs solid solutions were grown on porous GaAs(100) substrates by liquid-phase epitaxy. A comparison between the compositions and thicknesses of these epitaxial layers with those of layers obtained under the same conditions on normal monolithic GaAs substrates suggests that the crystallization of epitaxial layers on porous substrates may be considered as the growth of free unstrained films.
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