Ushbu ish iqtibos qilgan ishlar

8 ta ish

Ish: Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence

1. Near ultraviolet luminescence of Be doped GaN grown by reactive molecular beam epitaxy using ammonia

   A. Salvador, W. Kim, Özgür Aktaş +3

   Maqola19962 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.566385

2. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

   Isamu Akasaki, Hiroshi Amano, Yasuo Koide +2

   Maqola19892 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.604276

3. Spatial distribution of the luminescence in GaN thin films

   F. A. Ponce, D. P. Bour, Werner Götz +1

   Maqola19962 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.611529

4. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.669310

5. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.669311

6. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.669312

7. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.669313

8. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.669314