Ushbu ish iqtibos qilgan ishlar

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Ish: 4H-SiC pn Diode Grown by LPE Method for High-Power Applications

1. 4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates

   N.I. Kuznetsov, Andrey Morozov, D. A. Bauman +8

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20002 iqtibos

   ABIABI:AkademIndex/openalex/2000.article.000164

2. Electrical Characteristics of 4H-SiC pn Diode Grown by LPE Method

   N.I. Kuznetsov, D. A. Bauman, A.V. Gavrilin +1

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20022 iqtibos

   ABIABI:AkademIndex/openalex/2002.article.000200

3. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes

   Peder Bergman, H. Lendenmann, Per Åke Nilsson +2

   Maqola20012 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.659152

4. Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes

   H. Lendenmann, Fanny Dahlquist, Nils Johansson +4

   Maqola20012 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.659153

5. Sarlavhasiz

   Boshqa2 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.659154

6. Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies

   H. Morkoç̌, S. Strite, Guangjun Gao +3

   Maqola19942 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.668922