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Nonlinear optical characteristics of CdS and ZnS nanoparticles implanted into zirconium oxide thin films

R. A. GaneevInstitute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8581, JapanMakoto MoritaDepartment of Applied Chemistry, Seikei University, Kichijoji, Musashino-shi, Tokyo, 180-8633, JapanA. I. Ryasnyanskiı̆Samarkand State University, Samarkand, 703004, UzbekistanM. BabaInstitute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8581, JapanD. RauDepartment of Applied Chemistry, Seikei University, Kichijoji, Musashino-shi, Tokyo, 180-8633, JapanHiroyuki FujiiDepartment of Applied Chemistry, Seikei University, Kichijoji, Musashino-shi, Tokyo, 180-8633, JapanM. SuzukiInstitute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8581, JapanM. TuruInstitute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8581, JapanHiroto KurodaInstitute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8581, Japan

Optics and Spectroscopyjournal2004en

ABI

Annotatsiya

The nonlinear refractive indices γ and nonlinear absorption coefficients of ZrO2 films doped with CdS or ZnS nanoparticles, as well as with various metals, are measured. The effects of semiconductor and metal nanoparticles and annealing on the nonlinear optical properties of films are studied. The structural parameters of films, determined by electron microscopy and x-ray dispersion spectroscopy, are compared to the optical and nonlinear optical characteristics of these media. The high magnitude of γ of the films ((3±0.6)×10−11 cm2 W− 1) is attributed to the surface enhancement effect in semiconductor nanoparticles. On the basis of Z-scan data obtained at different intensities of radiation, it is shown that the variations in γ of the ZrO2:CdS(Cr) and ZrO2:ZnS(Mn) films are related to the generation of free carriers.

Mavzular

Nonlinear Optical Materials Studies Quantum Dots Synthesis And Properties Chalcogenide Semiconductor Thin Films

Identifikatorlar

DOI: 10.1134/1.1813700

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