High‐temperature anomalies in resistivity and thermoelectric power of thick‐film resistors and their conduction mechanism
G. AbdurakhmanovArifov Institute of Electronics, the Academy of Science of Uzbekistan, 33 F. Khodjaev st., 700125 Tashkent, UzbekistanN. G. AbdurakhmanovaArifov Institute of Electronics, the Academy of Science of Uzbekistan, 33 F. Khodjaev st., 700125 Tashkent, Uzbekistan
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Abstract Resistivity ρ and thermoelectric power S of RuO 2 ‐based thick‐film resistors were measured in tempera‐ ture range T = 77–1100 K. Sharp maxima of ρ and S occur at 1000 K. ρ = 7.5 × 10 3 Ω cm and S = +90 μV/K at the maxima, while ρ = 2.5 × 10 3 Ω cm and S = +10 μV/K at room temperature. Thermoelectric power becomes negative at temperatures in the range 700–800 K and 1000–1070 K. It is assumed that the peculiarities of ρ and S are caused by structural changes in compounds of the lead‐silicate glass used in the thick‐film resistors. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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