Study of Ion Induced Damage in 4H-SiC
Alessandro Lo GiudiceUniversity of Torino and INFNP. OliveiraINFM-research unit, Torino-University,F. FizzottiINFM-research unit, Torino-University,C. ManfredottiUniversity of Torino and INFNE. VittoneExperimental Physics Dept. Univ. of Torino and INFN, Torino (Italy); INFM-Research Unit, Torino-Univ. (Italy)Stefano BiancoPolitecnico di TorinoG. BertuccioNational Institute of Nuclear Physics INFNR. CasiraghiDept. of Electronics Engin. and Information Science, Politecnico of Milano (Italy)M. JakšićLab. for Ion Beam Interactions, Ruder Boskovic Inst., Zagreb (Croatia)
ABI
Annotatsiya
The damage produced by 2 MeV protons on a 4H-SiC Schottky diode has been investigated by monitoring the charge collection efficiency as the function of the ion fluence. A new algorithm based on the Shockley-Ramo-Gunn theorem has been developed to interpret the experimental results. The fitting procedure provides a parameter which is proportional to the average number of active electrical traps generated by a single ion, which can be profitably used to estimate the radiation hardness of the material.
Hali tarjima qilinmagan
Mavzular
Identifikatorlar
Iqtiboslar va manbalar
0 ta iqtibos7 ta foydalanilgan manba