Maqola

Influence of deposition conditions on the antireflection properties of diamond-like carbon films for Si-based solar cells

N.I. KlyuiLashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 45, Kiev, 03028, UkraineВ. Г. ЛитовченкоLashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 45, Kiev, 03028, UkraineA. N. LukyanovLashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 45, Kiev, 03028, UkraineL. V. NeselevskayaLashkarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 45, Kiev, 03028, UkraineAndrey SarikovHahn-Meitner-Institut Berlin, Kekuléstraße 5, 12489, Berlin, GermanyВ. Г. ДыскинPhysicotechnical Institute, Physics-Sun Research and Production Association, Academy of Sciences of Uzbekistan, ul. Mavlyanova 2b, Tashkent, 70084, UzbekistanU. Kh. GazievPhysicotechnical Institute, Physics-Sun Research and Production Association, Academy of Sciences of Uzbekistan, ul. Mavlyanova 2b, Tashkent, 70084, UzbekistanZ. S. SettarovaPhysicotechnical Institute, Physics-Sun Research and Production Association, Academy of Sciences of Uzbekistan, ul. Mavlyanova 2b, Tashkent, 70084, UzbekistanМ. Н. ТурсуновPhysicotechnical Institute, Physics-Sun Research and Production Association, Academy of Sciences of Uzbekistan, ul. Mavlyanova 2b, Tashkent, 70084, Uzbekistan

Technical Physicsjournal2006en

ABI

Annotatsiya

The influence of deposition conditions on the antireflection properties of diamond-like carbon films for Si-based solar cells is studied theoretically. The values of the short-circuit current density for Si solar cells covered by diamond-like carbon films deposited at different concentrations of nitrogen in the gas mixture are calculated and compared with the associated values for uncovered solar cells. It is shown that the short-circuit current density increases with nitrogen concentration in the gas mixture because of a lower light absorption by the growing film. Optimum thicknesses of the diamond-like carbon films are calculated that provides a maximal increase in the output short-circuit current density of Si-based solar cells under both AM1.5 and AM0 conditions.

Hali tarjima qilinmagan

Mavzular

Diamond and Carbon-based Materials Research Carbon Nanotubes in Composites Semiconductor materials and devices

Identifikatorlar

DOI: 10.1134/s1063784206050197

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