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7 ta ish

Ish: 4H-SiC High Temperature Spectrometers

  1. High-dose Al-implanted 4H-SiC p+-n-n+ junctions

    E. V. Kalinina, G. Kholujanov, В. Н. Соловьев +11

    Maqola20004 iqtibos
    ABI

  2. Development of a silicon carbide radiation detector

    F.H. Ruddy, A.R. Dulloo, J.G. Seidel +2

    Maqola19983 iqtibos
    ABI

  3. Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices

    Evgenia V. Kalinina, G. Kholuyanov, Yu. A. Goldberg +8

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20022 iqtibos
    ABI

  4. Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers

    Evgenia V. Kalinina, G. Kholuyanov, A. А. Ситникова +6

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20031 iqtibos
    ABI

  5. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  6. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  7. Sarlavhasiz

    Boshqa1 iqtibos
    ABI