Combined method of growing epitaxial layers of A³B⁵ semiconductor compounds
D. M. YodgorovaPhysical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanA. V. KarimovPhysical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanF. A. GiyasovaPhysical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanR. A. SaidovaPhysical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
ABI
Annotatsiya
A combined method for obtaining epitaxial layers of A3B5 semiconductor compounds is described, carried out in a single technological process by both forced cooling and isothermal mixing of solution-melts. In this process, the parameters of the grown layers are determined by the cooling regime and the rate of supply of the mixed solutions. The proposed method and device are of interest for producing semiconductor structures with a variable bandgap width in the active regions.
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