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Ish: Effect of the Ge content on the Schottky barrier height in structures based on Si1 − x Ge x solid solution
Laterally-Graded SiGe Crystals for High Resolution Synchrotron Optics
A. Erko, N. V. Abrosimov, V. Alex
Maqola20026 iqtibosABINew semiconductor detectors for nuclear radiation utilizing Si1-x Ge x alloy
М. С. Саидов, Р. А. Муминов, I. G. Atabaev +2
Maqola19964 iqtibosABISurface barrier detectors using aluminum on n- and p-type silicon for α-spectroscopy
H. Rahab, A. Keffous, H. Menari +3
Maqola20013 iqtibosABIMetal–semiconductor junctions on <i>p</i>-type strained Si1−<i>x</i>Ge<i>x</i> layers
Omer Nur, M. Willander, Raşit Turan +2
Maqola19962 iqtibosABISputtered gold as an effective Schottky gate for strained Si∕SiGe nanostructures
G. D. Scott, M. Xiao, H. W. Jiang +2
Maqola20072 iqtibosABI