Asosiy kontentga oʻtish
AkademIndex

Mahsulotlar

Ishlab chiquvchilar uchun

AkademBaseEkotizim uchun ochiq API
← Ishga qaytish

Ushbu ish iqtibos qilgan ishlar

12 ta ish

Ish: Positron probing of gamma-irradiated Ge doped with P, As, Sb, and Bi: Changes in atomic structures of defects due to n→p conversion

  1. Impurities and point defects in semiconductors

    V. V. Emtsev, T.V. Mashovets

    Maqola19817 iqtibos
    ABI

  2. Condensed matter : new research

    Mrinmay Das

    Kitob20075 iqtibos
    ABI

  3. Theory of Positron Annihilation in Solids

    Richard A. Ferrell

    Maqola19565 iqtibos
    ABI

  4. Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi

    В. П. Маркевич, I.D. Hawkins, А. R. Peaker +5

    Maqola20044 iqtibos
    ABI

  5. Positron probing of point V-group impurity-vacancy complexes in γ-irradiated germanium

    N.Yu. Arutyunov, V. V. Emtsev

    Maqola20063 iqtibos
    ABI

  6. Donor-vacancy complexes in Ge: Cluster and supercell calculations

    J. Coutinho, Sven Öberg, V. J. B. Torres +3

    Maqola20062 iqtibos
    ABI

  7. Configuration of DV Complexes In Ge: Positron Probing of Ion Cores

    N.Yu. Arutyunov, V. V. Emtsev, E.M. Sayed +1

    Maqola20072 iqtibos
    ABI

  8. Elementally specific electron–positron annihilation radiation emitted from ion cores of group-V impurity–vacancy complexes in germanium

    N.Yu. Arutyunov, V. V. Emtsev

    MaqolaMuon and positron interactions and applicationsPhysica B Condensed Matter20071 iqtibos
    ABI

  9. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  10. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  11. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  12. Sarlavhasiz

    Boshqa1 iqtibos
    ABI