Maqola

Positron probing of gamma-irradiated Ge doped with P, As, Sb, and Bi: Changes in atomic structures of defects due to n→p conversion

N.Yu. ArutyunovInstitute of Electronics, UAS, 700170 Tashkent, UzbekistanV. V. EmtsevIoffe Physicotechnical Institute, RAS, 194021 St. Petersburg, Russia

Physica B Condensed Matterjournal2009en

ABI

Annotatsiya

Annotatsiya mavjud emas.

Mavzular

Muon and positron interactions and applications Semiconductor materials and devices X-ray Spectroscopy and Fluorescence Analysis

Identifikatorlar

DOI: 10.1016/j.physb.2009.08.213

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