Asosiy kontentga oʻtish
AkademIndex

Mahsulotlar

Ishlab chiquvchilar uchun

AkademBaseEkotizim uchun ochiq API
← Ishga qaytish

Ushbu ish iqtibos qilgan ishlar

3 ta ish

Ish: Measurement of efficient thickness of transition layer, stimulated by microwave radiation, in contacts Mo-GaAs

  1. Physics of Semiconductor Devices

    Geoffrey Pridham

    Maqola197019 iqtibos
    ABI
  2. The Physics of Semiconductor Devices

    Kitob202414 iqtibos
    ABI
  3. Sarlavhasiz

    Boshqa1 iqtibos
    ABI