Measurement of efficient thickness of transition layer, stimulated by microwave radiation, in contacts Mo-GaAs

Using method of Auger electronic spectroscopy, we experimentally research an influence of microwave treatment on efficient thickness modification in transition layer of Mo-GaAs contacts. It is shown that parameters of Schottky barriers (barriers height ϕ B and ideality factor n) are correlated with efficient thickness of transition layer after microwave treatment.

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