A. B. Kamalov

2 ta ish

Combined Institute of Natural Sciences of the Karakalpak Branch of the Academy of Sciences of the Republic of Uzbekistan, Nukus, Uzbekistan

1. Measurement of efficient thickness of transition layer, stimulated by microwave radiation, in contacts Mo-GaAs

   A. B. Kamalov

   MaqolaSemiconductor materials and interfacesRadioelectronics and Communications Systems20090 iqtibos

   ABIABI:AkademIndex/openalex/2009.article.000298

2. Modification of Au-Ti(W, Cr, TiB x )-GaAs contacts properties caused by external influences

   A. B. Kamalov

   MaqolaSemiconductor materials and interfacesRadioelectronics and Communications Systems20090 iqtibos

   ABIABI:AkademIndex/openalex/2009.article.000320